Self-reset transient-to-digital convertor and electronic product utilizing the same

ABSTRACT

A self-reset transient-to-digital convertor which includes at least one transient detection circuit is disclosed. The transient detection circuit, coupled between a first power line and a second power line, includes at least one voltage drop unit, a current amplifier unit, and a time control unit. When an ESD event occurs, the voltage drop unit is conducted to pass through an ESD current. The current amplifier unit, coupled between the voltage drop unit and the first power line, is conducted by the ESD current to set the level of a first node. The time control unit, coupled between the first node and the second power line, is configured to gradually drain the ESD current away. Wherein, each of the transient detection circuit generates a digital code according to the level of the first node.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a transient-to-digitalconvertor, and more particularly to a transient-to-digital convertorgenerating digital codes according to an electrostatic discharge (ESD)pulse.

2. Description of Related Art

An electrostatic discharge (ESD) event is an important reliability issuefor integrated circuits (ICs). ESD protection is also a criticalreliability issue for ICs. As semiconductor processes advance towarddeep sub-micron manufacturing, scaled-down devices and thinner gateoxides are more vulnerable to ESD stress. Generally, the IC chips musthave the ability to withstand certain levels of ESD of high stress inmachine mode (MM) or in human body mode (HBM). The issues result fromstrict reliability test standard requirements, such as system-level ESDtests.

The additional noise filter networks, such as the decoupling capacitor,transient voltage suppressor (TVS), and/or current-limiting resistance,are often used to improve the system-level ESD immunity ofmicroelectronic products. The system-level ESD immunity of CMOS ICsunder system-level ESD test can be significantly enhanced by choosingproper noise filter networks. However, the additional discretenoise-bypassing components substantially increase the total cost ofmicroelectronic products. Therefore, a need has arisen by IC industry topropose a novel chip-level solution which meets high system-level ESDspecification for microelectronic products without additional discretenoise-decoupling components on the microelectronic products.

SUMMARY OF THE INVENTION

In view of the foregoing, it is an object of the present invention toprovide an on-chip transient-to-digital convertor which outputs digitalcodes corresponding to different ESD voltages without additionaldiscrete noise-bypassing components, and executes an auto-recoveryprocedure in microelectronic systems based on RC delay effect afterdetecting an ESD pulse, which achieves decreased cost.

According to one embodiment, a self-reset transient-to-digital convertorwhich includes at least one transient detection circuit is disclosed.The transient detection circuit, coupled between a first power line anda second power line, includes at least one voltage drop unit, a currentamplifier unit, and a time control unit. When an ESD event occurs, thevoltage drop unit is conducted to pass through an ESD current. Thecurrent amplifier unit, coupled between the voltage drop unit and afirst node, is conducted by the ESD current to set the level of thefirst node. The time control unit, coupled between the first node andthe second power line, is configured to gradually drain the ESD currentaway. Wherein, each of the transient detection circuit generates adigital code according to the level of the first node.

According to another embodiment, an electronic product which includes atleast one transient-to-digital convertor is disclosed. Thetransient-to-digital convertor includes at least one transient detectioncircuit which is coupled between a first power line and a second powerline. The transient detection circuit includes at least one voltage dropunit, a current amplifier unit, and a time control unit. When an ESDevent occurs, the voltage drop unit is conducted to pass through an ESDcurrent. The current amplifier unit, coupled between the voltage dropunit and a first node, is conducted by the ESD current to set the levelof the first node. The time control unit, coupled between the first nodeand the second power line, is configured to gradually drain the ESDcurrent away. Wherein, each of the transient detection circuit generatesa digital code according to the level of the first node.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates an electronic product according to one embodiment ofthe present invention;

FIG. 2 illustrates a transient-to-digital convertor according to oneembodiment of the present invention;

FIG. 3 illustrates a transient detection circuit according to oneembodiment of the present invention;

FIG. 4 illustrates a 3-bit transient-to-digital convertor according toone embodiment of the present invention; and

FIGS. 5 a-5 c illustrate the digital codes according to one embodimentof the present invention.

DETAILED DESCRIPTION OF THE INVENTION

Firstly, FIG. 1 illustrates an electronic product 1 according to oneembodiment of the present invention. As shown in FIG. 1, the electronicproduct 1 includes a plurality of internal circuits 11 a-11 n, aplurality of transient-to-digital convertors 13 a-13 n, and a processor15. The transient-to-digital convertors 13 a-13 n, coupled with theinternal circuits 11 a-11 n respectively, are configured to detectwhether an ESD event occurs in the internal circuits 11 a-11 n andaccordingly generate the digital code V_(OUT). In one embodiment, thetransient-to-digital convertors 13 a-13 n may be integrated in the CMOSchips of the internal circuits 11 a-11 n. The processor 15, coupled tothe transient-to-digital convertors 13 a-13 n, receives the generateddigital code V_(OUT) to determine whether the ESD event occurs in thecorresponding internal circuits 11 a-11 n. Specifically, the internalcircuits 11 a-11 n may be single chips, timing controllers, drivingcircuits, or the combination thereof.

Afterwards, FIG. 2 illustrates a transient-to-digital convertoraccording to one embodiment of the present invention. Taking thetransient-to-digital convertor 13 a for example, it includes a pluralityof transient detection circuits 13 a 1-13 an, and each of them couplesbetween a first power line (voltage source VDD) 21 and a second powerline (ground VSS) 23. When an ESD event occurs in the first power line21, the transient detection circuits 13 a 1-13 an generate digital codesV_(OUT1)-V_(OUTN) according to amplitude of an ESD pulse generated bythe ESD event.

FIG. 3 illustrates a transient detection circuit according to oneembodiment of the present invention. Taking the transient detectioncircuit 13 a 1 for example, it includes a voltage drop unit 13 a 11, acurrent amplifier unit 13 a 13, a time control unit 13 a 15, and abuffer unit 13 a 17. When the ESD event occurs in the first power line21, the voltage drop unit 13 a 11 is conducted to pass through an ESDcurrent. The current amplifier unit 13 a 13, coupled between the voltagedrop unit 13 a 11 and a first node A, is conducted by the ESD current toset the level of the first node A. In one embodiment, the voltage dropunit 13 a 11 includes two diodes connected to which in serial. Thecurrent amplifier unit 13 a 13 includes a first transistor M1 and asecond transistor M2, wherein the first transistor M1 is coupled betweenthe voltage drop unit 13 a 11 and the second power line 23, and thesecond transistor M2 is coupled between the first power line 21 and thefirst node A. The gate of the second transistor M2 is connected to thegate of the first transistor M1. The voltage drop unit 13 a 11 may beconfigured between the current amplifier unit 13 a 13 and the firstpower line 21, and/or between the current amplifier unit 13 a 13 and thesecond power line 23.

Assume that the level of the first node A is 0 (low level) in regularoperation (no ESD event occurs). Once the ESD voltage generated by theESD event is large enough to conduct the diodes of the voltage drop unit13 a 11, the second transistor M2 is activated, so that the ESD currentis directed into the first node A to change the level of the first nodeA from 0 (low level) to 1 (high level).

The time control unit 13 a 15, coupled between the first node A and thesecond power line 23, includes a resistor R and a capacitor C, where theresistor R is coupled between the first node A and the second power line23, and the capacitor C is connected to the resistor R in parallel. Atfirst, the capacitor C of the time control unit 13 a 15 may be chargedbecause the ESD current is directed into the first node A, so as tochange the level of the first node A from 0 to 1. Then, based on thenature delay time constant of RC circuits, the resistor R can graduallydrain the ESD current to the second power line 23, so as to reset thelevel of the first node A to 0 automatically.

A user can obtain, whether an ESD event occurs according to the level ofthe first node A. Alternatively, in this embodiment, the buffer unit 13a 17, coupled to the first node A, can be used to process the level ofthe first node A for increasing the driving function of the level of thefirst node A. The processed result serves as a digital code V_(OUT1).Specifically, the buffer unit 13 a 17 includes an inverter for invertingthe level of the first node A and providing the inverted result to serveas the digital code V_(OUT1). In another embodiment, the buffer unit 13a 17 may include several inverters or be omitted.

The transient-to-digital convertor 13 a having only one transientdetection circuit 13 a 1 (1-bit transient-to-digital convertor) merelycan indicate or warn whether an ESD event occurs. In some cases, pluraltransient detection circuits may be configured in thetransient-to-digital convertor 13 a to determine the level of the ESDpulse generated by the ESD event. FIG. 4 illustrates a 3-bittransient-to-digital convertor according to one embodiment of thepresent invention. As shown in FIG. 4, the transient-to-digitalconvertor 13 a includes three transient detection circuits 13 a 1-13 a 3with different ESD abilities, respectively. The digital codes outputtedby the transient-to-digital convertor 13 a correspond to different ESDvoltages. Specifically, the voltage drop unit 13 a 11-13 a 31 in thetransient detection circuits 13 a 1-13 a 3 have two, three, and fourdiodes, respectively, for withstanding different amplitudes of the ESDpulse. For example, when the amplitude of the ESD pulse is 3.5V, onlythe voltage drop unit 13 a 11 is conducted, so that the level of thedigital code V_(OUT1) is changed to 0, and the levels of the digitalcodes V_(OUT2), V_(OUT3) are still 1, as shown in FIG. 5A, the digitalcodes outputted by the transient-to-digital convertor 13 a can bereferred to as “110.” Based on delay time constant, the resistor IR ofthe time control unit 13 a 15 then gradually drains the ESD current atthe first node A away to reset the level of the first node A to 0automatically, so as to operate with regular voltage.

Similarly, if generating more ESD pulse such as 4.5V which is largeenough to conduct the three diodes of the voltage drop unit 13 a 21, thelevels of the digital codes V_(OUT1), V_(OUT2) are changed to 0, and thelevel of the digital code V_(OUT3) is still 1, as shown in FIG. 5B, thedigital codes outputted by the transient-to-digital convertor 13 a canbe referred to as “100.” Based on delay time constant, the resistors Rof the time control units 13 a 15, 13 a 25 then gradually drain the ESDcurrent at the first nodes A away respectively, so as to reset thelevels of the first nodes A to 0 automatically. If further generatingmore ESD pulse such as 5.5V which is large enough to conduct the fourdiodes of the voltage drop unit 13 a 31, the levels of all the digitalcodes V_(OUT1)-V_(OUT3) are changed to 0, as shown in FIG. 5C, thedigital codes outputted by the transient-to-digital convertor 13 a canbe referred to as “000.” The time control units 13 a 15-13 a 35 thendrain the ESD current at the first nodes A away respectively, so as tooperate with regular voltage. Due to the factor that the number of thediodes included in the voltage drop units 13 a 11-13 a 31 of thetransient-to-digital convertor 13 a is directly proportional to thedetected ESD pulse, so the outputted digital codes can be used todetermine the level of the ESD pulse generated by the ISD event.

The processor 15 receives the generated digital codes V_(OUT1)-V_(OUT3)and accordingly to execute a specific action. Specifically, by providinga hardware/firmware co-design, it indicates that the ESD pulse generatedby the ESD event exceeds a preset value when the level of the digitalcodes V_(OUT3) is changed to 0, then the processor 15 executes totalsystem auto-recovery for the internal circuit where that ESD eventoccurs. In opposition, it indicates that the ESD pulse generated by theESD event is smaller than the preset value if only the level of thedigital codes V_(OUT1) is changed to 0, the processor 15 executespartial system auto-recovery for the internal circuit where that ESDevent occurs. Therefore, the hardware/firmware co-design with thetransient-to-digital convertor 13 a can improve the immunity of CMOS ICproducts against electrical transient disturbance.

According to the above embodiment, the self-reset transient-to-digitalconvertor and electronic product utilizing the same, provided in thepresent invention, convert the transient voltage into the digital codesto detect whether an ESD event occurs. Therefore, when the ESD eventoccurs, it can issue a protect/warn signal without additional discretenoise-bypassing components. Furthermore, the present invention utilizesplural transient detection circuits with different level of convertingto determine the level of the ESD pulse generated by the ESD eventaccording to the outputted digital codes. The present invention alsobypasses transient voltages or currents by RC circuit to reset toregular voltage automatically. So that the traditional resethardware/firmware may be omitted, which achieves decreased cost.

Although specific embodiments have been illustrated and described, itwill be appreciated by those skilled in the art that variousmodifications may be made without departing from the scope of thepresent invention, which is intended to be limited solely by theappended claims.

What is claimed is:
 1. A self-reset transient-to-digital convertor,comprising: at least one transient detection circuit coupled between afirst power line and a second power line, comprising: at least onevoltage drop unit configured to be conducted to pass through an ESDcurrent when an ESD event occurs; a current amplifier unit coupledbetween the voltage drop unit and a first node, wherein the currentamplifier unit is conducted by the ESD current to set the level of thefirst node; and a time control unit coupled between the first node andthe second power line and configured to gradually drain the ESD currentaway; wherein, each of the transient detection circuit generates adigital code according to the level of the first node.
 2. The self-resettransient-to-digital convertor of claim 1, wherein the time control unitcomprises: a resistor coupled between the first node and the secondpower line to gradually drain the ESD current to the second power line,so as to reset the level of the first node automatically; and acapacitor connected to the resistor in parallel.
 3. The self-resettransient-to-digital convertor of claim 2, wherein the current amplifierunit comprises: a first transistor coupled between the voltage drop unitand the second power line; and a second transistor coupled between thefirst power line and the first node, and the gate of the secondtransistor is connected to the gate of the first transistor; wherein,once the voltage drop unit is conducted, the second transistor isactivated to direct the ESD current into the first node.
 4. Theself-reset transient-to-digital convertor of claim 3, wherein thevoltage drop unit comprises at least one diode.
 5. The self-resettransient-to-digital convertor of claim 4, further comprising: a bufferunit, coupled to the first node, configured to process the level of thefirst node to output the digital code.
 6. The self-resettransient-to-digital convertor of claim 5, wherein the buffer unitcomprises at least one inverter for inverting the level of the firstnode and providing the inverted result to serve as the digital code. 7.The self-reset transient-to-digital convertor of claim 5, wherein thenumber of the transient detection circuit is more than 1, and thedigital codes generated by the transient detection circuits are used todetermine the level of an ESD pulse generated by the ESD event.
 8. Theself-reset transient-to-digital convertor of claim 7, wherein the numberof the diodes included in the voltage drop units is directlyproportional to the detected ESD pulse.
 9. An electronic product,comprising: at least one transient-to-digital convertor, comprising: atleast one transient detection circuit coupled between a first power lineand a second power line, comprising: at least one voltage drop unitconfigured to be conducted to pass through an ESD current when an ESDevent occurs; a current amplifier unit coupled between the voltage dropunit and a first node, wherein the current amplifier unit is conductedby the ESD current to set the level of the first node; and a timecontrol unit coupled between the first node and the second power lineand configured to gradually drain the ESD current away; wherein, each ofthe transient detection circuit generates a digital code according tothe level of the first node.
 10. The electronic product of claim 9,further comprising: at least one internal circuit, wherein each of thetransient-to-digital convertor is coupled with each of the internalcircuit; and a processor unit, coupled to the transient-to-digitalconvertor, configured to receive the generated digital code to determinewhether the ESD event occurs in the corresponding internal circuit, andaccordingly to execute a specific action.
 11. The electronic product ofclaim 10, wherein the specific action comprises the operation of partialor total system auto-recovery for the internal circuit where the ESDevent occurs.
 12. The electronic product of claim 10, wherein thecurrent amplifier unit comprises: a first transistor coupled between thevoltage drop unit and the second power line; and a second transistorcoupled between the first power line and the first node, and the gate ofthe second transistor is connected to the gate of the first transistor;wherein, once the voltage drop unit is conducted, the second transistoris activated to direct the ESD current into the first node.
 13. Theelectronic product of claim 12, wherein, the voltage drop unit comprisesat least one diode.
 14. The electronic product of claim 13, wherein thetransient detection circuit further comprises: a buffer unit, coupled tothe first node, configured to process the level of the first node tooutput the digital code.
 15. The electronic product of claim 14, whereinthe number of the transient detection circuit is more than 1, and thedigital codes generated by the transient detection circuits are used todetermine the level of an ESD pulse generated by the ESD event.
 16. Theelectronic product of claim 15, wherein the number of the diodesincluded in the voltage drop units is directly proportional to thedetected ESD pulse.
 17. The electronic product of claim 10, wherein theinternal circuit is a single chip, a timing controller or a drivingcircuit.